SI4628DY Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4628DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
T_J = 150 °C
10
T_J = 25 °C
1
0.015
0.012
0.009
0.006
I_D = 20 A
T_J = 125 °C
0.003
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T_J = 25 °C
0.000
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10^-1
200
10^-2
30 V
160
20 V
10^-3
120
10^-4
10 V
80
10^-5
40
10^-6
0
25
50
75
100 125 150
T_J - Temperature (°C)
Reverse Current (Schottky)
100
Limited by R_DS(on)*
10
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
www.vishay.com
4
1
100 ms
0.1
T_A = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
Document Number: 64811
S09-0871-Rev. A, 18-May-09