SI4620DY Datasheet, PDF (4/13 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4620DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
V_GS = 10 V thru 6 V
35
5V
30
25
20
4V
15
10
5
3V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
10
8
6
4
T_C = 125 °C
2
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.10
0.08
0.06
0.04
V_GS = 4.5 V
0.02
V_GS = 10 V
0.00
0
5 10 15 20 25 30 35 40
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
800
700
600
C_iss
500
400
300
200
100
C_rss
0
0
5
C_oss
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
I_D = 6 A
8
V_DS = 15 V
6
V_DS = 24 V
4
1.6
V_GS = 10 V
I_D = 6 A
1.4
1.2
1.0
2
0.8
0
0
2
4
6
8
10
Q_g - Total Gate Charge (nC)
Gate Charge
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4
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73862
S09-1341-Rev. D, 13-Jul-09