SI4490DY_13 Datasheet, PDF (4/8 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

Si4490DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1.0
60
50
0.5
I_D = 250 µA
40
0.0
30
- 0.5
20
- 1.0
10
- 1.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
100
Time (s)
Single Pulse Power
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
2
1
Duty Cycle = 0.5
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 65 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10 ^{- 2}
10 ^{- 1}
1
10
Square Wave Pulse Duration (s)
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1
0.05
0.02
0.01
10 ^{- 4}
Single Pulse
10 ^{- 3}
10 ^{- 2}
10 ^{- 1}
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71341.
www.vishay.com
4
Document Number: 71341
S09-0705-Rev. C, 27-Apr-09