SI4435DDY-T1-GE3 Datasheet, PDF (4/10 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si4435DDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.06
10
T_J = 150 °C
1
T_J = 25 °C
0.05
0.04
0.03
0.1
0.02
0.01
T_J = - 50 °C
0.01
I_D = 9.1 A
T_J = 125 °C
T_J = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.6
100
80
0.4
I_D = 250 µA
60
0.2
I_D = 1 mA
40
0.0
20
- 0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
100
Limited by R_DS(on)*
100 µs
10
1 ms
1
10 ms
100 ms
0.1
T_A = 25 °C
Single Pulse
BVDSS Limited
1s
10 s
100 s, DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area
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4
Document Number: 68841
S09-0863-Rev. C, 18-May-09