SI4102DY-T1-GE3 Datasheet, PDF (4/10 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

Si4102DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.4
0.3
T_J = 150 °C
0.2
I_D = 2.7 A
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
4.0
0.1
0.0
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
3.6
40
3.2
30
2.8
I_D = 250 µA
20
2.4
10
2.0
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
10
Limited by R_DS(on)*
0
0.001 0.01 0.1
1
10
100 1000
Time (s)
Single Pulse Power
100 µs
1
1 ms
10 ms
0.1
100 ms
T_A = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
1s
10 s
DC
100
1000
V_DS - Drain-to-Source Voltage (V)
* V_GS minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 69252
4
S13-0631-Rev. C, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000