SI3850DV Datasheet, PDF (4/6 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si3850DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
NĆCHANNEL
Source-Drain Diode Forward Voltage
4.0
On-Resistance vs. Gate-to-Source Voltage
0.8
T_J = 150_C
0.6
1.0
0.4
T_J = 25_C
0.2
I_D = 1.2 A
0.1
0
0.2
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Single Pulse Power
30
0.1
24
–0.0
I_D = 250 mA
18
–0.1
12
–0.2
6
–0.3
–0.4
–50 –25
2
0 25 50 75 100 125 150
0
0.001
0.010
0.100
1.000
T_J – Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
10.000
0.2
0.1
0.1
0.05
0.02
0.01
10^–4
Single Pulse
10^–3
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2-4
10^–2
10^–1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 100_C/W
3. T_JM – T_A = P_DMZ_thJA(t)
4. Surface Mounted
1
10
30
Document Number: 70778
S-55457—Rev. B, 09-Mar-98