SI3585CDV Datasheet, PDF (4/16 Pages) Vishay Siliconix – N- and P-Channel 20 V (D-S) MOSFET

Si3585CDV
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12
5
V_GS = 5 V thru 3 V
V_GS = 2.5 V
4
9
3
6
V_GS = 2 V
T_C = 25 °C
2
3
V_GS = 1.5 V
0
0
0.5
1
1.5
2
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
1
T_C = 125 °C
0
T_C = - 55 °C
0
0.5
1
1.5
2
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.08
210
0.07
0.06
0.05
V_GS = 2.5 V
V_GS = 4.5 V
0.04
0.03
0
3
6
9
12
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
I_D = 3.5 A
4
V_DS = 5 V
3
V_DS = 10 V
2
V_DS = 16 V
1
168
C_iss
126
84
C_oss
42
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.3
I_D = 3.5 A
V_GS = 4.5 V
1.1
0.9
0
0
5
10
15
20
Q_g - Total Gate Charge (nC)
Gate Charge
0.7
V_GS = 2.5 V
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 67470
4
S11-0613-Rev. A, 04-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000