SI2374DS Datasheet, PDF (4/10 Pages) Vishay Telefunken – N-Channel 20 V (D-S) MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (T_J = 25 °C, unless otherwise noted)
100
0.070
10
T_J = 150 °C
1
T_J = 25 °C
0.055
0.040
0.025
Si2374DS
Vishay Siliconix
I_D = 4 A
T_J = 125 °C
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.8
I_D = 250 μA
0.65
0.5
0.35
0.010
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
30
20
10
0.2
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.001 0.01
0.1
1
Time (s)
10
100
Single Pulse Power (Junction-to-Ambient)
100
Limited by R_DS(on)*
10
Limited by I_DM
100 μs
1
1 ms
10 ms
0.1
100 ms
10 s, 1 s
0.01
T_A = 25 °C
DC
BVDSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
S14-0768-Rev. A, 14-Apr-14
4
Document Number: 62947
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000