S949T_05 Datasheet, PDF (4/10 Pages) Vishay Siliconix – MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage

S949T / S949TR / S949TRW
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
250
40
200
150
100
50
0
0
95 10783
25 50 75 100 125 150
T_amb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
30
20
10
0
0
95 11152
V_DS=9V
f=200MHz
1
2
3
4
V_G2S – Gate 2 Source Voltage ( V )
Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage
20
16
V_G2S = 5 V
12
4V
3V
8
2V
4
0
0
95 11150
1.5 V
1V
1 2 3 4 5 6 7 89
V_DS – Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
4
3
2
1
0
0
95 11153
V_DS = 9 V
f = 200 MHz
12 3 4 5 6
V_G2S – Gate 2 Source Voltage ( V )
Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage
20
V_DS = 9 V
16
12
8
4
0
0
95 11151
1
2
3
4
V_G2S – Gate 2 Source Voltage ( V )
Figure 3. Drain Current vs. Gate 2 Source Voltage
2
1.5
1
0.5
0
3
95 11154
V_G2S = 4 V
f = 200 MHz
5
7
9
11
V_DS – Drain Source Voltage ( V )
Figure 6. Output Capacitance vs. Drain Source Voltage
www.vishay.com
4
Document Number 85061
Rev. 1.4, 02-May-05