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S593T_08 Datasheet, PDF (4/10 Pages) Vishay Siliconix – MOSMIC® for TV-Tuner Prestage with 5 V Supply Voltage
S593T/S593TR/S593TRW
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
250
40
VDS = 5 V
f = 200 MHz
200
30
150
20
100
10
50
0
0
95 10759
25 50 75 100 125 150
Tamb – AmbientTemperature (° C )
0
0
1
2
3
4
95 11164
VG2S – Gate 2 Source Voltage ( V )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage
20
16
12
VG2S = 4 V
8
3V 2V
4
0
0
95 11162
1V
1
2
3
4
5
VDS – Drain Source Voltage ( V )
Figure 2. Drain Current vs. Drain Source Voltage
4
3
2
1
0
0
95 11165
VDS = 5 V
f = 200 MHz
1
2
3
4
5
6
VG2S – Gate 2 Source Voltage ( V )
Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage
20
VDS = 5 V
16
12
8
4
0
0
95 11163
1
2
3
4
VG2S - Gate 2 Source V oltage ( V )
Figure 3. Drain Current vs. Gate 2 Source Voltage
2
1.5
1
0.5
0
3
95 11166
VG2S = 4 V
f = 200 MHz
4
5
6
7
VDS – Drain Source Voltage ( V )
Figure 6. Output Capacitance vs. Drain Source Voltage
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4
Document Number 85047
Rev. 1.6, 08-Sep-08