J308 Datasheet, PDF (4/7 Pages) ON Semiconductor – JFET VHF/UHF Amplifiers

J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
100
50
I_DSS @ V_DS = 10 V, V_GS = 0 V
g_fs @ V_DS = 10 V, V_GS = 0 V
f = 1 kHz
80
40
10 nA
1 nA
Gate Leakage Current
I_G ^@ I_D = 10 mA
T_A = 125_C
200 mA
60
30
g_fs
40
I_DSS
20
20
10
100 pA
I_GSS @ 125_C
10 pA
1 pA
T_A = 25_C
10 mA
200 mA
I_GSS @ 25_C
0
0
0
–1
–2
–3
–4
–5
V_GS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
100
300
80
240
60
r_DS
g_os
180
40
120
20
0
0
15
12
r_DS @ I_D = 1 mA, V_GS = 0 V
g_os @ V_DS = 10 V, V_GS = 0 V, f = 1 kHz
–1
–2
–3
–4
V_GS(off) – Gate-Source Cutoff Voltage (V)
Output Characteristics
V_GS(off) = –1.5 V
V_GS = 0 V
60
0
–5
–0.2 V
9
–0.4 V
6
–0.6 V
3
–0.8 V
–1.0 V
0
0
0.2
0.4
0.6
0.8
1
V_DS – Drain-Source Voltage (V)
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7-4
0.1 pA
0
3
6
9
12
15
V_DG – Drain-Gate Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
20
V_GS(off) = –3 V
V_DS = 10 V
f = 1 kHz
16
T_A = –55_C
12
8
25_C
4
125_C
0
0.1
1
10
I_D – Drain Current (mA)
Output Characteristics
30
V_GS(off) = –3 V
24
V_GS = 0 V
18
12
6
0
0
–0.4 V
–0.8 V
–1.2 V
–1.6 V
–2.0 V
–2.4 V
0.2
0.4
0.6
0.8
1
V_DS – Drain-Source Voltage (V)
Document Number: 70237
S-04028—Rev. G, 04-Jun-01