IRFPS30N60K Datasheet, PDF (4/8 Pages) International Rectifier – SMPS MOSFET

IRFPS30N60K, SiHFPS30N60K
Vishay Siliconix
1000000
100000
10000
VGS = 0V, f = 1 MHZ
C _iss
= Cgs + Cgd , C _ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
Crss
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
100.0
10.0
TJ = 150°C
1.0
TJ = 25°C
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-toDrain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID= 30A
16
12
VDS= 480V
VDS= 300V
VDS= 120V
8
4
0
0 40 80 120 160 200 240
QG Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100μsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
10msec
100
1000 10000
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4
Document Number: 91256
S09-0007-Rev. B, 19-Jan-09