IRFBE20 Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)

IRFBE20, SiHFBE20
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91117
S-81262-Rev. A, 07-Jul-08