GA100NA60UP Datasheet, PDF (4/10 Pages) Vishay Siliconix – Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

GA100NA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
14000
12000
10000
8000
V_GE = 0V, f = 1MHz
C_ies = C_ge + C_{gc ,} C_ce SHORTED
C_res = C_gc
C_oes = C_ce + C_gc
?C_ies
6000
4000
C_oes
2000
0
1
C_res
10
100
V_CE , Collector-to-Emitter Voltage (V)
Fig. 6 - Typical Capacitance vs.
Collector to Emitter Voltage
20
V_CC = 400V
I C = 50A
16
12
8
4
0
0
100
200
300
400
500
Q_G , Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs.
Gate to Emitter Voltage
10
VCC= 480V
VGE = 15V
TJ = 25°C
8 I _C= 60A
6
100
RG = 5.0Ω
VGE = 15V
VCC= 480V
10
1
IC = 120A
IC = 60A
IC = 30A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
12
RG = 5.0Ω
TJ = 150°C
10 VGE = 15V
VCC= 480V
8
6
4
2
0
20
40
60
80
100
IC, Collector Current (A)
Fig. 10 - Typical Switching Losses vs.
Collector to Emitter Current
1000
V_GE = 20V
T _J = 125 ^oC
100
10
4
2
0
10
20
30
40
50
RG, Gate Resistance ( Ω)
Fig. 8 - Typical Switching Losses vs.
Gate Resistance
?SAFE OPERATING AREA
1
1
10
100
1000
V_CE , Collector-to-Emitter Voltage (V)
Fig. 11 - Turn-Off SOA
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4
For technical questions within your region, please contact one of the following: Document Number: 94543
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Revision: 22-Jul-10