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DG467 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Low Power, High Voltage SPST Analog Switches
DG467/DG468
Vishay Siliconix
SPECIFICATIONSa (V+ = 12 V)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VIN = 2.4 V, 0.8 Vf
D Suffix
- 40 to 85 °C
Tempb Mind Typc Maxd Unit
Analog Switch
Analog Signal Rangee
Drain-Source On-Resistance
VANALOG
rON
INO/NC = –10 mA, VCOM = 8 V
V+ = 10.8 V
Full
0
Room
Full
12
V
12
16
20
Ω
On-Resistance Flatness
rON
Flatness
INO/NC = 10 mA, VCOM = 2, 6, 8 V
V+ = 10.8 V
Room
Full
1.5
3
4
Ω
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injectione
tON
tOFF
VNO, NC = ± 10 V, RL = 300 Ω, CL = 35 pF
Room
Full
Room
Full
Q
CL = 1 nF, Vgen = 0 V, Rgen = 0 Ω
Room
130
160
200
nS
50
80
100
8
pC
Power Supplies
Positive Supply Current
I+
V+ = 13.2 V, VIN = 0 V, 5 V
Room
Full
3
7
10
µA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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4
Document Number: 74413
S-70327–Rev. B, 26-Feb-07