DG401_09 Datasheet, PDF (4/17 Pages) Vishay Siliconix – Low-Power, High-Speed CMOS Analog Switches

DG401, DG403, DG405
Vishay Siliconix
SPECIFICATIONS^a
Parameter
Analog Switch
Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V_L = 5 V, V_IN = 2.4 V, 0.8 V^f
D Suffix
- 40 °C to 85 °C
Temp.^b Typ.^c Min.^d Max.^d Unit
Analog Signal Range^e
Drain-Source
On-Resistance
Δ Drain-Source
On-Resistance
Switch Off Leakage Current
Channel On Leakage Current
Digital Control
V_ANALOG
R_DS(on)
ΔR_DS(on)
I_S(off)
I_D(off)
I_D(on)
I_S = - 10 mA, V_D = ± 10 V
V+ = 13.5 V, V- = - 13.5 V
I_S = - 10 mA, V_D = ± 5 V, 0 V
V+ = 16.5 V, V- = - 16.5 V
V+ = 16.5 V, V- = - 16.5 V
V_D = ± 15.5 V, V_S = ± 15.5 V
V+ = 16.5 V, V- = - 16.5 V
V_S = V_D = ± 15.5 V
Full
- 15
15
V
Room
30
Full
Room
3
Full
45
55
Ω
3
5
Room - 0.01 - 0.5 0.5
Hot
-5
5
Room - 0.01 - 0.5 0.5
Hot
-5
5
nA
Room - 0.04 - 1
1
Hot
- 10
10
Input Current V_IN Low
I_IL
Input Current V_IN High
I_IH
Dynamic Characteristics
V_IN under test = 0.8 V
All Other = 2.4 V
V_IN under test = 2.4 V
All Other = 0.8 V
Full 0.005 - 1
Full 0.005 - 1
1
µA
1
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay (DG403)
Charge Injection
Off Isolation Reject Ratio
Channel-to-Channel Crosstalk
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
t_ON
t_OFF
t_D
Q
OIRR
X_TALK
C_S(off)
C_D(off)
C_D, C_S(on)
I+
I-
I_L
I_GND
R_L = 300 Ω, C_L = 35 pF
See Figure 2
R_L = 300 Ω, C_L = 35 pF
C_L = 10 nF
V_gen = 0 V, R_gen = 0 Ω
R_L = 100 Ω, C_L = 5 pF
f = 1 MHz
f = 1 MHz, V_S = 0 V
V+ = 16.5 V, V- = - 16.5 V
V_IN = 0 or 5 V
Room
75
Room
30
Room
35
5
Room
60
Room
72
Room
90
Room
12
Room
12
Room
39
Room 0.01
Full
Room - 0.01 - 1
Full
-5
Room 0.01
Full
Room - 0.01 - 1
Full
-5
150
100 _ns
pC
dB
pF
1
5
µA
1
5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V_IN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70049
S09-2561-Rev. I, 30-Nov-09