DG309B Datasheet, PDF (4/8 Pages) Vishay Siliconix – Improved Quad CMOS Analog Switches

DG308B/309B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r_DS(on) vs. V_D and Power Supply Voltages
110
100
90
"5 V
80
r_DS(on) vs. V_D and Temperature
100
V+ = 15 V
90
V– = –15 V
80
70
70
60
125_C
60
"10 V
50
85_C
50
"15 V
40
25_C
40
30
–55_C
"20 V
30
20
20
10
10
–20 –16 –12 –8 –4 0 4 8
V_D – Drain Voltage (V)
12 16 20
0
–15 –10
–5
0
5
10
15
V_D – Drain Voltage (V)
r_DS(on) vs. V_D and Single Power Supply Voltages
250
225
V+ = 5 V
200
175
150
7V
125
10 V
100
12 V
75
15 V
50
25
0
0 2 4 6 8 10 12 14 16
V_D – Drain Voltage (V)
Leakage Currents vs. Temperature
1 nA
V+ = 15 V
V– = –15 V
V_S, V_D = "14 V
Leakage Currents vs. Analog Voltage
40
30
V+ = 22 V
V– = –22 V
T_A = 25_C
20
10
I_D(on)
0
I_S(off), I_D(off)
–10
–20
–30
–40
–20 –15 –10 –5 0
5 10 15 20
Analog Voltage
Q_S, Q_D – Charge Injection vs. Analog Voltage
30
20
100 pA
10 pA
I_S(off), I_D(off)
10
V+ = 15 V
0
V– = –15 V
–10
–20
V+ = 12 V
V– = 0 V
1 pA
–55 –35 –15 5 25 45 65
Temperature (_C)
85 105 125
–30
–15 –10
–5
0
5
Analog Voltage (V)
10
15
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4-4
Document Number: 70047
S-52896—Rev. E, 14-Jul-97