CNY75A Datasheet, PDF (4/11 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output,with Base Connection

CNY75A/B/C/GA/GB/GC
Optocoupler, Phototransistor Output, _{Vishay Semiconductors}
with Base Connection
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
Turn-on time
V_CC = 5 V, R_L = 1 kΩ
(see figure 4)
Turn-off time
V_CC = 5 V, R_L = 1 kΩ
(see figure 4)
PART SYMBOL MIN
CNY75GA
t_on
CNY75GB
t_on
CNY75GC
t_on
CNY75GA
t_off
CNY75GB
t_off
CNY75GC
t_off
TYP.
10
16.5
11
25
20
37.5
MAX
UNIT
µs
µs
µs
µs
µs
µs
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
OUTPUT
I_F
130
mA
Power dissipation
COUPLER
P_diss
265
mW
Rated impulse voltage
Safety temperature
V_IOTM
T_si
6
kV
150
°C
Note
According DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
TEST CONDITION
100 %, t_test = 1 s
Partial discharge test voltage -
lot test (sample test)
t_Tr = 60 s, t_test = 10 s,
(see figure 2)
Insulation resistance
V_IO = 500 V
V_IO = 500 V, T_amb ≤ 100 °C
V_IO = 500 V, T_amb ≤ 150 °C
(construction test only)
SYMBOL
V_pd
V_IOTM
V_pd
R_IO
R_IO
R_IO
MIN.
1.6
6.0
1.3
10¹²
10¹¹
10⁹
TYP.
MAX.
UNIT
kV
kV
kV
Ω
Ω
Ω
275
250
225
200
175
150
125
100
75
50
25
0
0
95 10923
P_si (mW)
I_si (mA)
25 50 75 100 125 150 175
T_amb - Ambient Temperature (°C)
Fig. 1 - Derating Diagram
V_IOTM
V_Pd
V_IOWM
V_IORM
t₁, t₂ = 1 to 10 s
t₃, t₄ = 1 s
t_test = 10 s
t_stres = 12 s
0
13930
t₁
t_Tr = 60 s
t₃ t_test t₄
t₂ t _stres
t
Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-5/DIN EN 60747-; IEC60747
Document Number: 83536
Rev. 1.7, 08-May-08
For technical questions, contact: [e-mail]
www.vishay.com
257