CNY64 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Optocoupler with Phototransistor Output

CNY64/ CNY65/ CNY66
Vishay Semiconductors
Coupler
Parameter
Rated impulse voltage
Safety temperature
Test condition
Insulation Rated Parameters
Parameter
Partial discharge test voltage -
Routine test
Partial discharge test voltage -
Lot test (sample test)
Test condition
100 %, t_test = 1 s
t_Tr = 60 s, t_test = 10 s,
(see figure 2)
Insulation resistance
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
V_IO = 500 V, T_amb = 150 °C
(construction test only)
250
225
200
175
150
125
100
75
50
25
0
0
95 10922
P_si (mW)
I_si (mA)
25 50 75 100 125 150 175 200
T_amb ( °C )
Figure 1. Derating diagram
VISHAY
Symbol
Min
Typ.
Max
Unit
V_IOTM
8
kV
T_si
150
°C
Symbol
V_pd
V_IOTM
V_pd
R_IO
R_IO
R_IO
V_IOTM
V_Pd
V_IOWM
V_IORM
Min
Typ.
2.8
8
2.2
10¹²
10¹¹
10⁹
t₁, t₂ = 1 to 10 s
t₃, t₄ = 1 s
t_test = 10 s
t_stres = 12 s
Max
Unit
kV
kV
kV
Ω
Ω
Ω
0
t₁
13930
t_Tr = 60 s
t₃ t_test t₄
t₂ t_stres
t
Figure 2. Test pulse diagram for sample test according to DIN EN
60747-5-2(VDE0884)/ DIN EN 60747-; IEC60747
www.vishay.com
4
Document Number 83540
Rev. 1.6, 26-Oct-04