8EWF02SPBF Datasheet, PDF (4/8 Pages) Vishay Siliconix – Surface Mountable Fast Soft Recovery Diode, 8 A

8EWF..SPbF Soft Recovery Series
Vishay High Power Products
Surface Mountable
Fast Soft Recovery Diode, 8 A
100
10
T _J= 25°C
T_J= 150°C
8EWF..SSeries
1
0.5
1
1.5
2
2.5
3
InstantaneousForward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1.4
8EWF..S Series
1.2 ^TJ ^{= 25 °C}
I _FM = 20 A
1
10 A
0.8
8A
0.6
5A
0.4
2A
0.2
1A
0
0
40
80 120 160 200
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
Fig. 10 - Recovery Charge Characteristics, T_J = 25 °C
0.4
8EWF..SSeries
T_J = 25 °C
0.3
I _FM = 20 A
0.2
10 A
8A
5A
0.1
2A
1A
0
0
40
80
120 160 200
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
Fig. 8 - Recovery Time Characteristics, T_J = 25 °C
2.4
2.2 ^{8EWF..SSeries}
T_J= 150 °C
2
I_FM = 20 A
1.8
10 A
1.6
8A
1.4
1.2
5A
1
0.8
0.6
2A
0.4
0.2
0
1A
40
80 120 160 200
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
Fig. 11 - Recovery Charge Characteristics, T_J = 150 °C
0.4
8EWF..SSeries
T_J = 150 °C
0.3
I_FM = 20 A
0.2
10 A
8A
5A
0.1
2A
1A
0
0
40
80 120 160 200
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
Fig. 9 - Recovery Time Characteristics, T_J = 150 °C
16
8EWF..SSe ries
14 T_J= 25 °C
12
10
8
6
4
I _FM = 20 A
10 A
8A
5A
2A
1A
2
0
0
40
80 120 160 200
Rate Of Fall Of Forward Current - dI/ dt (A/ µs)
Fig. 12 - Recovery Current Characteristics, T_J = 25 °C
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4
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Document Number: 94108
Revision: 01-Jul-09