8ETH06PBF_11 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Hyperfast Rectifier, 8 A FRED Pt

VS-8ETH06PbF, VS-8ETH06FPPbF
Vishay Semiconductors ^{Hyperfast Rectifier, 8 A FRED Pt®}
180
170
160
DC
150
Square wave (D = 0.50)
140
Rated V_R applied
130
See note (1)
120
0
2
4
6
8
10
12
I_F(AV) - Average Forward Current (A)
Fig. 6 - Maximum Allowable Case Temperature vs.
Average Forward Current
180
160
20
18
16
RMS limit
14
12
10
8
6
4
DC
2
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0
2
4
6
8
10
12
I_F(AV) - Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
60
V_R = 390 V
T_J = 125 °C
50
T_J = 25 °C
140
40
DC
120
Square wave (D = 0.50)
Rated V_R applied
100
80
0
See note (1)
2
4
6
8 10 12 14
I_F(AV) - Average Forward Current (A)
Fig. 7 - Maximum Allowable Case Temperature vs.
Average Forward Current (FULL-PAK)
30
20
I_F = 16 A
I_F = 8 A
10
100
1000
dI_F/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dI_F/dt
400
V_R = 390 V
350 T_J = 125 °C
T_J = 25 °C
300
250
I_F = 16 A
I_F = 8 A
200
150
100
50
0
100
1000
dI_F/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 8);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = Rated V_R
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Revision: 28-Apr-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000