85EPF12 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Fast Soft Recovery Rectifier Diode, 85 A

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1000
100
T_J = 150 °C
10
T_J = 25 °C
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
93159_07
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
VS-85EPF12 Soft Recovery Series
Vishay Semiconductors
4.0
T_J = 25 °C
3.5
3.0
2.5
I_FM = 80 A
I_FM = 40 A
I_FM = 125 A
2.0
I_FM = 20 A
1.5
I_FM = 10 A
1.0
0.5
0
0
I_FM = 1 A
40
80
120
160
200
93159_10 dI/dt - Rate of Fall of Forward Current (A/μs)
Fig. 10 - Recovery Charge Characteristics, T_J = 25 °C
0.22
0.20
I_FM = 125 A
I_FM = 80 A
0.18
0.16
I_FM = 40 A
0.14
0.12
0.10
I_FM = 20 A
I_FM = 10 A
0.08
0.06 _{TJ = 25 °C}
I_FM = 1 A
0.04
0
40
80
120
160
200
93159_08 dI/dt - Rate of Fall of Forward Current (A/μs)
Fig. 8 - Recovery Time Characteristics, T_J = 25 °C
14
T_J = 150 °C
12
10
8
I_FM = 80 A
I_FM = 40 A
6
I_FM = 20 A
4
I_FM = 10 A
2
I_FM = 1 A
0
0
40
80
120
160
200
93159_11 dI/dt - Rate of Fall of Forward Current (A/μs)
Fig. 11 - Recovery Charge Characteristics, T_J = 150 °C
0.6
T_J = 150 °C
0.5
I_FM = 80 A
0.4
I_FM = 40 A
0.3
I_FM = 20 A
0.2
I_FM = 10 A
0.1
0
0
I_FM = 1 A
40
80
120
160
200
93159_09 dI/dt - Rate of Fall of Forward Current (A/μs)
Fig. 9 - Recovery Time Characteristics, T_J = 150 °C
22
20 ^TJ ^{= 25 °C}
18
16
14
12
10
8
6
4
2
0
0
40
I_FM = 80 A
I_FM = 40 A
I_FM = 125 A
I_FM = 20 A
I_FM = 10 A
I_FM = 1 A
80
120
160
200
93159_12 dI/dt - Rate of Fall of Forward Current (A/μs)
Fig. 12 - Recovery Current Characteristics, T_J = 25 °C
Revision: 17-Jun-11
4
Document Number: 93159
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