80EBU04_11 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Ultrafast Soft Recovery Diode, 80 A FRED Pt

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180
160
140
DC
120
100 _{Square wave (D = 0.50)}
80% Rated Vr applied
80
see note (1)
60
0 20 40 60 80 100 120
Average Forward Current - IF_(AV)(A)
Fig. 2 - Maximum Allowable Case Temperature vs.
Average Forward Current
VS-80EBU04
Vishay Semiconductors
250
Vr = 200V
Tj = 125˚C
Tj = 25˚C
200
150
IF = 160A
IF = 80A
IF = 40A
100
50
100
di _F /dt (A/µs )
1000
Fig. 5 - Typical Reverse Recovery Time vs. dI_F/dt
140
RMS Limit
120
100
80
D = 0.01
60
D = 0.02
D = 0.05
40
D = 0.10
D = 0.20
20
D = 0.50
DC
0
0 20 40 60 80 100 120
Average Forward Current - IF_(AV)(A)
Fig. 4 - Forward Power Loss Characteristics
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
4500
4000
3500
Vr = 200V
Tj = 125˚C
Tj = 25˚C
3000
2500
IF = 160A
IF = 80A
IF = 40A
2000
1500
1000
500
0
100
1000
di _F/dt (A/µs )
Fig. 6 - Typical Stored Charge vs. dI_F/dt
Revision: 15-Jun-11
4
Document Number: 93025
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