60EPU04PBF_12 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Ultrafast Soft Recovery Diode, 60 A FRED Pt®

VS-60EPU04PbF, VS-60EPU04-N3, VS-60APU04PbF, VS-60APU04-N3
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Vishay Semiconductors
180
160
DC
140
Square wave (D = 0.50)
120 ^{80 % rated VR applied}
100
See note (1)
80
0
20
40
60
80
100
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
100
RMS limit
80
60
40
20
DC
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
0
0
20
40
60
80
100
I_F(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
200
V_R = 400 V
180
T_J = 125 °C
T_J = 25 °C
160
I_F = 120 A
I_F = 60 A
I_F = 40 A
140
120
100
80
60
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Reverse Recovery Time vs. dI_F/dt
3500
3000
2500
2000
1500
V_R = 400 V
T_J = 125 °C
T_J = 25 °C
I_F = 40 A
I_F = 60 A
I_F = 120 A
1000
500
0
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical Stored Charge vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;}
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6);
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
Revision: 15-Aug-11
4
Document Number: 94022
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