W08G-E451 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Glass Passivated Single-Phase Bridge Rectifier

W005G thru W10G
Vishay General Semiconductor
100
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
10
1
10
0.1
0.01
0.4
T_J = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.6
0.8
1.0
1.2
1.4
1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
1
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
100
10
T_J = 100 °C
10
1
0.1
T_J = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style WOG
0.388 (9.86)
0.348 (8.84)
0.220 (5.6)
0.160 (4.1)
1.0 (25.4) MIN.
0.032 (0.81)
0.028 (0.71)
0.060 (1.52)
0.020 (0.51)
0.348 (8.84)
0.308 (7.82)
0.220 (5.6)
0.180 (4.6)
0.220 (5.6)
0.180 (4.6)
Document Number: 88769 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-08
[e-mail], [e-mail], [e-mail]
www.vishay.com
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