VSMY294310G Datasheet, PDF (3/9 Pages) Vishay Siliconix – High Speed Infrared Emitting Diodes

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VSMY294310RG, VSMY294310G
Vishay Semiconductors
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
1000
t_p = 100 µs
100
10
1000
t_p = 100 μs
100
10
1
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
V_F - Forward Voltage (V)
Fig. 3 - Forward Current vs. Forward Voltage
0.1
1
10
100
I_F - Forward Current (mA)
1000
Fig. 6 - Radiant Intensity vs. Forward Current
1.50
I_F = 20 mA
1.45
1.40
1.35
1.30
1.25
1.20
- 60 - 40 - 20 0 20 40 60 80 100
T_amb - Ambient Temperature (°C)
Fig. 4 - Forward Voltage vs. Ambient Temperature
110
I_F = 20 mA
105
100
95
90
85
80
- 60 - 40 - 20 0 20 40 60 80 100
T_amb - Ambient Temperature (°C)
Fig. 7 - Relative Radiant Intensity vs. Ambient Temperature
115
I_F = 20 mA
110
105
100
95
90
- 60 - 40 - 20 0 20 40 60 80 100
T_amb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
100
90
80
70
60
50
40
30
20
10
0
800
I_F = 20 mA
850
900
950 1000
λ - Wavelength (nm)
1050
Fig. 8 - Relative Radiant Intensity vs. Wavelength
Rev. 1.0, 13-Oct-15
3
Document Number: 84338
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