VS-VSKL300 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Industrial standard package

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VS-VSKL300/08PbF
Vishay Semiconductors
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
P_GM
P_G(AV)
I_GM
T_J = T_J maximum, t_p  5 ms
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p  5 ms
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
Maximum holding current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate voltage not to trigger
DC gate current not to trigger
Maximum non-repetitive rate of rise of
turned-on current
V_GT
I_GT
I_H
+V_GM
-V_GM
V_GD
I_GD
dI/dt
T_J = 25 °C
Anode supply: 12 V resistive load
T_J = T_J maximum, t_p  5 ms
T_J = T_J maximum
Maximum gate current/voltage not to trigger is
the maximum value which will not trigger any
unit with rated V_DRM anode to cathode applied
Gate drive 20 V, 20 , t_r  1 μs
T_J = T_J maximum, anode voltage  80 % V_DRM
VALUES
10.0
2.0
3.0
3
200
600
20
5.0
0.30
10
1000
UNITS
W
A
V
mA
V
V
mA
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
T_J
Maximum storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface smooth, flat and greased
Mounting torque ± 10 %
IAP to heatsink
busbar to IAP
Approximate weight
A mounting compound is recommended and
the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound. Lubricated threads.
Case style
VALUES
-40 to 140
-40 to 150
0.19
0.035
UNITS
°C
K/W
4 to 6
Nm
500
g
17.8
oz.
INT-A-PAK
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT T_J MAXIMUM
180° 120° 90°
60°
30°
RECTANGULAR CONDUCTION
AT T_J MAXIMUM
180° 120°
90°
60°
30°
VSKL300
0.019 0.022 0.028 0.041 0.068 0.013 0.023 0.031 0.043 0.069
Note
• Table shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
UNITS
K/W
Revision: 11-Apr-14
3
Document Number: 94557
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