VS-STPS1L30UPBF Datasheet, PDF (3/7 Pages) Vishay Siliconix – High Performance Schottky Rectifier

www.vishay.com
10
T_J = 125 °C
1
T_J = 25 °C
0.1
0
0.2
0.4
0.6
0.8
V_FM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
1
0.1
0.01
T_J = 125 °C
T_J = 100 °C
T_J = 75 °C
T_J = 50 °C
0.001 T_J = 25 °C
0.0001
0
10
20
30
V_R - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
1000
VS-STPS1L30UPbF
Vishay Semiconductors
130
DC
120
D = 0.20
110
D = 0.25
D = 0.33
D = 0.50
D = 0.75
100
Square wave (D = 0.50)
80 % rated V_R applied
See note (1)
90
0
0.4
0.8
1.2
1.6
I_F(AV) - Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
0.5
D = 0.20
D = 0.25
0.4
D = 0.33
D = 0.50
D = 0.75
0.3
RMS limit
0.2
0.1
DC
0
0
0.4
0.8
1.2
1.6
I_F(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
1000
T_J = 25 °C
100
100
At any rated load condition
and with rated V_RRM applied
following surge
10
0
10
20
30
10
10
100
1000
10 000
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
t_p - Square Wave Pulse Duration (µs)
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 6); Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = 80 % rated V_R
Revision: 28-Aug-14
3
Document Number: 94324
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000