VS-ST780CL Datasheet, PDF (3/9 Pages) Vishay Siliconix – Phase Control Thyristors

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TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
VS-ST780CL Series
Vishay Semiconductors
SYMBOL
P_GM
P_G(AV)
I_GM
+ V_GM
- V_GM
I_GT
V_GT
I_GD
V_GD
TEST CONDITIONS
T_J = T_J maximum, t_p ≤ 5 ms
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p ≤ 5 ms
T_J = T_J maximum, t_p ≤ 5 ms
T_J = -40 °C
T_J = 25 °C
T_J = 125 °C
T_J = -40 °C
T_J = 25 °C
T_J = 125 °C
T_J = T_J maximum
Maximum required gate
trigger/current/voltage are the
lowest value which will trigger
all units 12 V anode to cathode
applied
Maximum gate
current/voltage not to trigger
is the maximum value which
will not trigger any unit with
rated V_DRM anode to cathode
applied
VALUES
UNITS
TYP. MAX.
10.0
W
2.0
3.0
A
20
V
5.0
200 -
100 200 mA
50
-
2.5
-
1.8 3.0
V
1.1
-
10
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction temperature range
T_J
Maximum storage temperature range
T_Stg
Maximum thermal resistance, junction to heatsink R_thJ-hs
DC operation single side cooled
DC operation double side cooled
Maximum thermal resistance, case to heatsink
R_thC-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
°C
-40 to 150
0.073
0.031
K/W
0.011
0.006
14 700
N
(1500)
(kg)
255
g
TO-200AC (B-PUK)
ΔR_thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
SINGLE SIDE DOUBLE SIDE
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
180°
0.009
0.009
0.006
0.006
120°
0.011
0.011
0.011
0.011
TEST CONDITIONS
UNITS
90°
0.014
0.014
0.015
0.015
T_J = T_J maximum
K/W
60°
0.020
0.020
0.021
0.021
30°
0.036
0.036
0.036
0.036
Note
• The table above shows the increment of thermal resistance R_thJ-hs when devices operate at different conduction angles than DC
Revision: 15-Apr-14
3
Document Number: 94415
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