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VS-ST230SPBF_15 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Phase Control Thyristors
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VS-ST230SPbF Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
PGM
PG(AV)
IGM
+ VGM
- VGM
IGT
VGT
IGD
VGD
TEST CONDITIONS
TJ = TJ maximum, tp  5 ms
TJ = TJ maximum, f = 50 Hz, d% = 50
TJ = TJ maximum, tp  5 ms
TJ = TJ maximum, tp  5 ms
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
TJ = 125 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units 12
V anode to cathode applied
VALUES
TYP. MAX.
10.0
2.0
3.0
20
5.0
180
-
90 150
40
-
2.9
-
1.8 3.0
1.2
-
UNITS
W
A
V
mA
V
Maximum gate current/voltage not
to trigger is the maximum value
10
mA
TJ = TJ maximum which will not trigger any unit with
rated VDRM anode to cathode
applied
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction 
temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
TStg
RthJC
RthC-hs
DC operation
Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
°C
-40 to 150
0.10
K/W
0.04
31
(275)
24.5
(210)
N·m
(lbf in)
280
g
TO-209AB (TO-93)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
180°
0.016
0.012
120°
0.019
0.020
90°
0.025
60°
0.036
0.027
0.037
TJ = TJ maximum
30°
0.060
0.060
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Revision: 11-Mar-14
3
Document Number: 94399
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