VS-ST183SP Datasheet, PDF (3/10 Pages) Vishay Siliconix – Inverter Grade Thyristors (Stud Version), 195 A

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VS-ST183SP Series
Vishay Semiconductors
SWITCHING
PARAMETER
Maximum non-repetitive rate of 
rise of turned-on current
Typical delay time
Maximum turn-off time
minimum
maximum
SYMBOL
dI/dt
t_d
t_q
TEST CONDITIONS
T_J = T_J maximum, V_DRM = Rated V_DRM
I_TM = 2 x dI/dt
T_J = 25 °C, V_DM = Rated V_DRM, I_TM = 50 A DC, t_p = 1 μs
Resistive load, gate pulse: 10 V, 5  source
T_J = T_J maximum, 
I_TM = 300 A, commutating dI/dt = 20 A/μs
V_R = 50 V, t_p = 500 μs, dV/dt: 200 V/μs
VALUES
1000
1.1
15
20
UNITS
A/μs
μs
BLOCKING
PARAMETER
SYMBOL
Maximum critical rate of rise of off-state voltage
dV/dt
Maximum peak reverse and off-state leakage current
I_RRM,
I_DRM
TEST CONDITIONS
T_J = T_J maximum, linear to 80 % V_DRM, 
higher value available on request
T_J = T_J maximum, rated V_DRM/V_RRM applied
VALUES
500
40
UNITS
V/μs
mA
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
Maximum DC gate currrent required to trigger
Maximum DC gate voltage required to trigger
Maximum DC gate current not to trigger
Maximum DC gate voltage not to trigger
SYMBOL
P_GM
P_G(AV)
I_GM
+ V_GM
- V_GM
I_GT
V_GT
I_GD
V_GD
TEST CONDITIONS
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p  5 ms
T_J = T_J maximum V_A = 12 V, R_a = 6 
T_J = T_J maximum, rated V_DRM applied
VALUES
60
10
10
20
5
200
3
20
0.25
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
T_J
T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125
°C
-40 to 150
0.105
K/W
0.04
31 (275)
24.5 (210)
N·m
(lbf · in)
280
g
TO-209AB (TO-93)
R_thJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION
TEST CONDITIONS
UNITS
180°
0.016
0.012
120°
0.019
0.020
90°
0.025
0.027
T_J = T_J maximum
K/W
60°
0.036
0.037
30°
0.060
0.060
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
3
Document Number: 94369
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