VS-ST180C Datasheet, PDF (3/10 Pages) Vishay Siliconix – Phase Control Thyristors

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VS-ST180C Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
P_GM
P_G(AV)
I_GM
+ V_GM
- V_GM
I_GT
V_GT
I_GD
V_GD
TEST CONDITIONS
T_J = T_J maximum, t_p  5 ms
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p  5 ms
T_J = - 40 °C
T_J = 25 °C
T_J = 125 °C
T_J = - 40 °C
T_J = 25 °C
T_J = 125 °C
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied
T_J = T_J maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V_DRM anode to cathode
applied
VALUES
typ. max.
10
2.0
3.0
20
5.0
180 -
90 150
40
-
2.9 -
1.8 3.0
1.2 -
10
0.25
UNIT
S
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction 
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
T_J
T_Stg
R_thJ-hs
R_thC-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNIT
S
-40 to 125
°C
-40 to 150
0.17
0.08
K/W
0.033
0.017
4900
N
(500)
(kg)
50
g
TO-200AB (A-PUK)
Revision: 26-Nov-13
3
Document Number: 94396
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