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VS-GB300AH120N Datasheet, PDF (3/6 Pages) Vishay Siliconix – High short circuit capability, self limiting to 6 x IC | |||
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www.vishay.com
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
TJ
Storage temperature range
TStg
Junction to caseï
per module
IGBT
Diode
RthJC
Case to sink
RthCS
Conductive grease applied
Mounting torque
Power terminal screw: M6
Mounting screw: M6
Weight
VS-GB300AH120N
Vishay Semiconductors
MIN. TYP. MAX. UNITS
-40
-
150
°C
-40
-
125
-
-
0.05
-
-
0.12 K/W
- 0.035 -
2.5 to 5.0
Nm
3.0 to 6.0
310
g
600
500
400
TJ = 25 °C
300
200
TJ = 125 °C
100
0
0
1
2
3
93475_01
VCE (V)
Fig. 1 - Typical Output Characteristics
VGE = 15 V
600
500
400
300
200
TJ = 125 °C
TJ = 25 °C
100
0
0
4
8
12
16
93475_02
VGE (V)
Fig. 2 - Typical Transfer Characteristics
VCE = 20 V
80
60
Eon
40
Eoff
20
0
0
200
400
600
93475_03
IC (A)
Fig. 3 - Switching Loss vs. Collector Current
VCC = 600 V, Rg = 4.7 ï, VGE = ± 15 V, TJ = 125 °C
140
120
100
Eon
80
60
40
20
Eoff
0
0
10
20
30
40
93475_04
Rg (Ω)
Fig. 4 - Switching Loss vs. Gate Resistor
VCC = 600 V, IC = 300 A, VGE = ± 15 V, TJ = 125 °C
Revision: 22-Oct-15
3
Document Number: 93475
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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