VS-GB100LP120N Datasheet, PDF (3/7 Pages) Vishay Siliconix – Molding Type Module IGBT, Chopper in 1 Package, 1200 V and 100 A

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THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Operating junction temperature range
Storage temperature range
IGBT (per 1/2 module)
Junction to case
Diode (per 1/2 module)
T_J
T_STG
R_thJC
Case to sink
Mounting torque
R_thCS
Conductive grease applied
Power terminal screw: M5
Mounting screw: M6
Weight of module
VS-GB100LP120N
Vishay Semiconductors
MIN. TYP. MAX.
-40
-
150
-40
-
125
-
-
0.19
-
-
0.28
-
0.05
-
2.5 to 5.0
3.0 to 6.0
150
UNITS
°C
K/W
Nm
g
300
250
200
25 °C
125 °C
150
100
50
V_GE = 15 V
0
0
1
2
3
4
5
V_CE (V)
Fig. 1 - Typical Output Characteristics
200
V_CE = 20 V
160
120
125 °C
80
25 °C
40
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
V_GE (V)
Fig. 2 - Typical Transfer Characteristics
100
V_CC = 600 V
R_g = 3 Ω
80 ^VGE ^{= ± 15 V}
T_J = 125 °C
60
E_on
40
20
E_off
0
0
50 100 150 200 250 300
I_C (A)
Fig. 3 - Switching Loss vs. Collector Current
25
V_CC = 600 V
I_C = 100 A
20 ^VGE ^{= ± 15 V}
E_on
T_J = 125 °C
15
E_off
10
5
0
0
10
20
30
R_g (Ω)
Fig. 4 - Switching Loss vs. Gate Resistor
Revision: 10-Jun-15
3
Document Number: 94808
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