VS-80RIA40 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Phase Control Thyristors

VS-80RIA...PbF, VS-81RIA...PbF, VS-82RIA...PbF Series
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TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P_GM
P_G(AV)
I_GM
+ V_GM
- V_GM
Maximum DC gate current required to trigger I_GT
Maximum DC gate voltage required to trigger V_GT
TEST CONDITIONS
T_J = T_J maximum, t_p  5 ms
T_J = T_J maximum, f = 50 Hz, d% = 50
T_J = T_J maximum, t_p  5 ms
T_J = - 40 °C
T_J = 25 °C
T_J = 125 °C
T_J = - 40 °C
T_J = 25 °C
T_J = 125 °C
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
VALUES
12
3
3
20
10
270
120
60
3.5
2.5
1.5
UNITS
W
A
V
mA
V
DC gate current not to trigger
DC gate voltage not to trigger
I_GD
Maximum gate current/voltage not to
6
mA
T_J = T_J maximum
trigger is the maximum value which
will not trigger any unit with rated
V_GD
V_DRM anode to cathode applied
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction 
temperature range
T_J
Maximum storage temperature range
Maximum thermal resistance, 
junction to case
T_Stg
R_thJC
DC operation
Maximum thermal resistance, 
case to heatsink
R_thCS Mounting surface, smooth, flat and greased
Mounting torque, ± 10 %
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
- 40 to 125
°C
- 40 to 150
0.30
K/W
0.1
15.5
(137)
14
(120)
N·m
(lbf · in)
130
g
TO-209AC (TO-94)
R_thJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
180°
0.042
RECTANGULAR CONDUCTION
0.030
TEST CONDITIONS
UNITS
120°
90°
60°
30°
0.050
0.064
0.095
0.164
0.052
0.070
0.100
0.165
T_J = T_J maximum
K/W
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
Revision: 11-Mar-14
3
Document Number: 94392
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