VS-50RIA60 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Medium Power Phase Control Thyristors (Stud Version), 50 A

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VS-50RIA Series
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
SYMBOL
P_GM
P_G(AV)
I_GM
+V_GM
-V_GM
I_GT
V_GT
I_GD
V_GD
TEST CONDITIONS
VALUES
T_J = T_J maximum, t_p  5 ms
10
2.5
2.5
20
10
T_J = - 40 °C
250
T_J = 25 °C
T_J = 125 °C
T_J = - 40 °C
Maximum required gate trigger
100
current/voltage are the lowest 
value which will trigger all units 6 V
50
anode to cathode applied
3.5
T_J = 25 °C
2.5
T_J = T_J maximum,
Maximum gate current/voltage
V_DRM = Rated voltage not to trigger is the maximum
5.0
value which will not trigger any
T_J = T_J maximum
unit with rated V_DRM anode to
0.2
cathode applied
UNITS
W
A
V
mA
V
mA
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum operating junction and
storage temperature range
T_J, T_Stg
Maximum thermal resistance, 
junction to case
R_thJC DC operation
Maximum thermal resistance, 
case to heatsink
R_thCS Mounting surface, smooth, flat and greased
Allowable mounting torque
Non-lubricated threads
Lubricated threads
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES UNITS
-40 to 125 °C
0.35
K/W
0.25
3.4 ^{+ 0 - 10}
%
(30)
2.3 ^{+ 0 - 10}
%
(20)
N·m
(lbf · in)
28
g
1.0
oz.
TO-208AC (TO-65)
R_thJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS UNITS
180°
0.078
0.057
120°
0.094
0.098
90°
0.120
60°
0.176
0.130
0.183
T_J = T_J maximum
K/W
30°
0.294
0.296
Note
• The table above shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC

Revision: 11-Mar-14
3
Document Number: 93711
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