VS-4ESH02-M3 Datasheet, PDF (3/7 Pages) Vishay Siliconix – Hyperfast Rectifier

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100
10
0
50
100
150
200
V_R - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
VS-4ESH02-M3
Vishay Semiconductors
5
RMS limit
4
3
D = 0.02
D = 0.05
2
D = 0.1
D = 0.2
D = 0.5
1
DC
0
0
1
2
3
4
5
6
7
I_F(AV) - Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
180
175
170
DC
165
Square wave (D = 0.50)
80 % rated V_R applied
160
See note ⁽¹⁾
155
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
I_F(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature
vs. Average Forward Current
45
40
35
30
25 °C
25
125 °C
20
15
10
5
100
dI_F/dt (A/μs)
1000
Fig. 6 - Typical Reverse Recovery Time vs. dI_F/dt
120
100
125 °C
80
60
40
25 °C
20
0
100
dI_F/dt (A/μs)
1000
Fig. 7 - Typical Stored Charge vs. dI_F/dt
Note
(1) _{Formula used: TC = TJ - (Pd + PdREV) x RthJC;ï€} 
Pd = Forward power loss = I_F(AV) x V_FM at (I_F(AV)/D) (see fig. 5); 
Pd_REV = Inverse power loss = V_R1 x I_R (1 - D); I_R at V_R1 = rated V_R
Revision: 24-Nov-14
3
Document Number: 94978
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