VS-20ETF02S-M3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Surface Mount Fast Soft Recovery Rectifier Diode, 20 A

VS-20ETF02S-M3, VS-20ETF04S-M3, VS-20ETF06S-M3 Series
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Vishay Semiconductors
150
20ETF.. Series
140
R_thJC (DC) = 0.9 K/W
130
Ø
120
Conduction angle
110
100
90
30° 60° 90° 120° 180°
80
70
0 2 4 6 8 10 12 14 16 18 20 22
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
45
DC
40
180°
35
120°
90°
30
60°
30°
25
20 _{RMS limit}
15
Ø
Conduction period
10
5
20ETF.. Series
T_J = 150 °C
0
0
5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
20ETF.. Series
140
R_thJC (DC) = 0.9 K/W
130
Ø
Conduction period
120
110
100
90
80
0
30°
60°
90°
120°
180°
DC
5 10 15 20 25 30 35
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
300
At any rated load condition and with
rated V_RRM applied following surge.
250
Initial T_J = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
20ETF.. Series
50
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
35
180°
30
120°
90°
60°
25
30°
20
RMS limit
15
10
Ø
Conduction angle
5
20ETF.. Series
T_J = 150 °C
0
0
5
10
15
20
25
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
550
Maximum non-repetitive surge current
500
versus pulse train duration.
450
Initial T_J = 150 °C
400
No voltage reapplied
Rated V_RRM reapplied
350
300
250
200
150
100 20ETF.. Series
50
0.001
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
3
Document Number: 94886
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