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VS-10MQ100HM3 Datasheet, PDF (3/6 Pages) Vishay Siliconix – High Performance Schottky Rectifier, 1 A
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10
TJ = 150 °C
1
TJ = 125 °C
TJ = 25 °C
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
0.1
0.01
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
0.001
TJ = 50 °C
0.0001
TJ = 25 °C
0
0
20
40
60
80
100
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
100
VS-10MQ100HM3
Vishay Semiconductors
150
140
130
DC
D = 0.20
D = 0.25
120 D = 0.33
D = 0.50
110 D = 0.75
Square wave (D = 0.50)
100 80 % rated VR applied
See note (1)
90
0
0.4 0.8 1.2 1.6 2.0 2.4
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
1.6
D = 0.20
1.4
D = 0.25
D = 0.33
1.2
D = 0.50
D = 0.75
1.0
0.8
RMS limit
0.6
DC
0.4
0.2
0
0
0.4 0.8 1.2 1.6 2.0 2.4
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
100
TJ = 25 °C
10
TJ = 25 °C
At any rated load condition and
with rated VRRM applied
following surge
1
0
20
40
60
80
100
10
10
100
1000
10 000
VR - Reverse Voltage (V)
tp - Square Wave Pulse Duration (µs)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 6 - Maximum Peak Surge Forward Current vs.
Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 02-Apr-15
3
Document Number: 94836
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