VO3120_12 Datasheet, PDF (3/10 Pages) Vishay Siliconix – 2.5 A Output Current IGBT and MOSFET Driver

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VO3120
Vishay Semiconductors
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
LED power dissipation
Output power dissipation
P_diss
45
mW
T_A
P_diss
250
mW
Total power dissipation
P_tot
285
mW
θ_CA
Maximum LED junction temperature
T_jmax.
125
°C
Package
T_C
Maximum output die junction temperature
T_jmax.
125
°C
θ_DC
θ_EC
Thermal resistance,
junction emitter to board
θ_JEB
169
°C/W
T_JD
θ_DE
T_JE
Thermal resistance,
junction emitter to case
Thermal resistance,
junction detector to board
θ_JEC
θ_JDB
192
°C/W
82
°C/W
θ_DB
θ_EB
T_B
Thermal resistance,
junction detector to case
Thermal resistance,
junction emitter to junction detector
θ_JDC
80
°C/W
θ_BA
19996
θ_JED
200
°C/W
T_A
Thermal resistance, case to ambient
θ_CA
2645
°C/W
Note
• The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each
resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal
resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation
of the thermal model, please reference Vishay’s Thermal Characteristics of Optocouplers application note.
ELECTRICAL CHARACTERISTICS
PARAMETER
High level output current
Low level output current
High level output voltage
Low level output voltage
High level supply current
Low level supply current
Threshold input current low to high
Threshold input voltage high to low
Input forward voltage
Temperature coefficient of forward voltage
Input reverse breakdown voltage
Input capacitance
UVLO threshold
UVLO hysteresis
TEST CONDITION
V_O = (V_CC - 4 V)
V_O = (V_CC - 15 V)
V_O = (V_EE + 2.5 V)
V_O = (V_EE + 15 V)
I_O = - 100 mA
I_O = 100 mA
Output open, I_F = 7 mA to 16 mA
Output open,
V_F = - 3 V to + 0.8 V
I_O = 0 mA, V_O > 5 V
I_F = 10 mA
I_F = 10 mA
I_R = 10 μA
f = 1 MHz, V_F = 0 V
V_O ≥ 5 V
I_F = 10 mA
SYMBOL
I_OH ⁽¹⁾
I_OH ⁽²⁾
I_OL ⁽¹⁾
I_OL ⁽²⁾
V_OH ⁽³⁾
V_OL
I_CCH
I_CCL
I_FLH
V_FHL
V_F
ΔV_F/ΔT_A
BV_R
C_IN
V_{UVLO +}
V_{UVLO -}
UVLO_HYS
MIN.
0.5
2.5
0.5
2.5
V_CC - 4
0.8
1
5
11
9.5
TYP.
0.2
- 1.4
60
1.6
MAX.
0.5
2.5
2.5
5
1.6
13.5
12
UNIT
A
A
A
A
V
V
mA
mA
mA
V
V
mV/°C
V
pF
V
V
V
Notes
• Minimum and maximum values were tested over recommended operating conditions (T_A = - 40 °C to 110 °C, I_F(ON) = 7 mA to 16 mA,
V_F(OFF) = - 3 V to 0.8 V, V_CC = 15 V to 32 V, V_EE = ground) unless otherwise specified. Typical values are characteristics of the device and are
the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. All typical values
were measured at T_amb = 25 °C and with V_CC - V_EE = 32 V.
(1) _{Maximum pulse width = 50 μs, maximum duty cycle = 0.5 %.}
(2) _{Maximum pulse width = 10 μs, maximum duty cycle = 0.2 %. This value is intended to allow for component tolerances for designs with}
I_O peak minimum = 2.5 A.
(3) _{In this test VOH is measured with a dc load current. When driving capacitive loads VOH will approach VCC as IOH approaches zero A. Maximum}
pulse width = 1 ms, maximum duty cycle = 20 %.
Rev. 1.4, 19-Oct-12
3
Document Number: 81314
For technical questions, contact: [e-mail]
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