VESD03A1C-HD1 Datasheet, PDF (3/7 Pages) Vishay Siliconix – ESD-Protection Diode in LLP1006-2L

Typical Characteristics
T_amb = 25 °C, unless otherwise specified
100 %
8 µs to 100 %
80 %
60 %
40 %
20 µs to 50 %
20 %
0%
0
20548
10
20
30
40
Time (µs)
Figure 1. 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
120 %
100 %
Rise time = 0.7 ns to 1 ns
80 %
60 %
53 %
40 %
27 %
20 %
0%
- 10 0 10 20 30 40 50 60 70 80 90 100
20557
Time (ns)
Figure 2. ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 Ω/150 pF)
90
f = 1 MHz
80
70
60
50
40
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5
20969
V_R (V)
Figure 3. Typical Capacitance C_D vs.
Reverse Voltage V_R
VESD03A1C-HD1
Vishay Semiconductors
100
10
1
0.1
0.01
0.001
0.5
0.6
0.7
0.8
0.9
20697
V_F (V)
Figure 4. Typical Forward Current I_F vs.
Forward Voltage V_F
7
6
5
4
3
2
1
0
0.01 0.1 1
10 100 1000 10000
20698
I_R (µA)
Figure 5. Typical Reverse Voltage V_R vs.
Reverse Current I_R
10
8 ^{positive surge}
6
4 ^Measured
acc. IEC 61000-4-5
V_C
2 ^{(8/20 µs - wave form)}
0
-2
negative surge
-4
0 1 2 3 4 5 6 7 8 9 10 11
20699
I_PP (A)
Figure 6. Typical Peak Clamping Voltage V_C vs.
Peak Pulse Current I_PP
Document Number 81797
Rev. 1.2, 02-Sep-08
For technical support, please contact: [e-mail]
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