VBT4045BP-E3 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

www.vishay.com
100
T_A = 150 °C
T_A = 125 °C
10
T_A = 100 °C
1
0.1
0.01
T_A = 25 °C
0.001
20
40
60
80
100
Percent of Rated Peak reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics
100 000
10 000
T_J = 25 °C
f = 1.0 MHz
V_stg = 50 mV_p-p
VBT4045BP-E3
Vishay General Semiconductor
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.360 (9.14)
0.320 (8.13)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
1K2
0.624 (15.85)
0.591 (15.00)
0.130 (3.3)
REF.
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.047 (1.19)
0.047 (1.2) REF.
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Revision: 09-Sep-13
3
Document Number: 89442
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000