VBT3045BP_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Trench MOS Barrier Schottky Rectifier

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100
T_A = 150 °C
10
T_A = 125 °C
T_A = 100 °C
1
0.1
0.01
20
T_A = 25 °C
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Typical Reverse Characteristics
10 000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
1000
VBT3045BP
Vishay General Semiconductor
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.190 (4.83)
0.160 (4.06)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Revision: 13-Mar-12
3
Document Number: 89449
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