VBT2060C-M3 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Trench MOS Schottky technology

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10
Junction to Case
VBT2060C-M3
Vishay General Semiconductor
10 000
1000
100
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance Per Diode
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.41 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN
K
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.360 (9.14)
0.320 (8.13)
1K2
0.624 (15.85)
0.591(15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
Mounting Pad Layout
0.42
(10.66)
MIN.
0.33
(8.38) ^MIN.
0.670 (17.02)
0.591 (15.00)
0.08
(2.032)
MIN.
0.105 (2.67)
(0.095) (2.41)
0.15
(3.81) ^MIN.
Revision: 21-May-13
3
Document Number: 87972
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