V60200PGW Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V60200PGW
Vishay General Semiconductor
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 25 °C
10 000
1000
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
T_A = 150 °C
10
1
T_A = 125 °C
0.1
10
Junction to Case
1
0.01
T_A = 25 °C
0.001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.245 (6.23)
0.225 (5.72)
0.840 (21.34)
0.820 (20.83)
0.160 (4.06)
0.140 (3.56)
0.565 (14.35)
0.545 (13.84)
0.645 (16.38)
0.625 (15.87)
0.323 (8.20)
0.313 (7.95)
0.170 (4.32)
Ø 0.146 (3.71)
Ø 0.136 (3.45)
0.090 (2.29)
0.080 (2.03)
0.131 (3.33)
0.121 (3.07)
TO-3PW
0.175 (4.45)
0.165 (4.19)
0.050 (1.27)
30° Ref.
3° Ref.
10° Typ.
Both Sides
3° Ref.
3° Ref.
0.098 (2.50)
0.083 (2.12)
0.077 (1.96)
0.063 (1.60)
0.079 (2.01)
0.065 (1.65)
0.551 (14.00)
0.537 (13.64)
R0.155 (R3.94)
R0.145 (R3.68)
0.467 (11.86)
0.453 (11.51)
5° Ref.
Both Sides
0.225 (5.72)
0.205 (5.21)
0.048 (1.22)
0.044 (1.12)
0.030 (0.75)
0.020 (0.50)
Document Number: 89184 For technical questions within your region, please contact one of the following:
Revision: 09-Feb-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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