V4PAN50_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – Surface Mount Trench MOS Barrier Schottky Rectifier

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50
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
T_A = 25 °C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
T_A = 150 °C
10
T_A = 125 °C
1
T_A = 100 °C
0.1
0.01
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typcial Reverse Leakage Characteristics
1000
100
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
V4PAN50
Vishay General Semiconductor
1000
Junction to Ambient
100
10
1
0.01
0.1
1
10
100
t -Pulse Duration (s)
Fig. 6 - Typcial Transient Thermal Impedance
110
100
Epoxy printed circiut
board FR4 copper
90
thickness = 70 μm
80
70
60
50
40
30
S (cm²)
20
0123456789
Copper Pad Areas (cm²)
Fig. 7 - Thermal Resistance Junction to Ambient vs.
Copper Pad Areas
Revision: 31-Jul-13
3
Document Number: 87910
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