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V40M120C Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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New Product
V40M120C, VI40M120C
Vishay General Semiconductor
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
100
10
TA = 150 °C
TA = 125 °C
1
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
0.0001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 11-Jan-12
3
Document Number: 89465
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