V20PWM10C Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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V20PWM10C
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise noted)
25.0
20.0
T_M =151 °C, R_thJM = 1.8 °C/W
15.0
10.0
5.0
T_A = 25 °C, R_thJA = 55 °C/W
0
0 25 50 75 100 125 150 175
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
100
T_J = 175 °C
10
T_J = 150 °C
T_J = 125 °C
1
T_J = 100 °C
0.1
0.01
0.001
T_J = 25 °C
0.0001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
8.0
D = 0.8
7.0
D = 0.5
6.0
D = 1.0
5.0
D = 0.3
4.0
D = 0.2
3.0
D = 0.1
T
2.0
1.0
D = t_p/T
t_p
0.0
0
2
4
6
8
10
12
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
100
T_J = 175 °C
10
T_J = 150 °C
T_J = 125 °C
1
T_J = 100 °C
0.1
0
T_J = 25 °C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
Junction to Ambient
10
Junction to Mount
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Revision: 01-Jun-17
3
Document Number: 87510
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