V20M120M-E3_15 Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual High Voltage Trench MOS Barrier Schottky Rectifier

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V20M120M-E3
Vishay General Semiconductor
100
T_A = 175 °C
10
T_A = 150 °C
T_A = 125 °C
1
T_A = 100 °C
T_A = 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mV_p-p
100
10
0.1
1
10
100
1000
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
T_A = 175 °C
T_A = 150 °C
1
T_A = 125 °C
T_A = 100 °C
0.1
0.01
0.001
T_A = 25 °C
0.0001
20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Device
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.160 (4.06)
0.140 (3.56)
PIN
123
0.635 (16.13)
0.625 (15.87)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
Revision: 11-Sep-13
3
Document Number: 89987
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