V20100S_11 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High-Voltage Trench MOS Barrier Schottky Rectifier

New Product
V20100S, VI20100S
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 C unless otherwise noted)
24
Resistive or Inductive Load
20
16
V20100S
VI20100S
12
8
4
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
20
18
16
14
12
10
8
6
4
2
0
0
D = 0.5 ^{D = 0.8}
D = 0.3
D = 0.2
D = 0.1
D = 1.0
T
D = t_p/T
t_p
4
8
12
16
20
24
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
100
T_A = 150 °C
T_A = 125 °C
10
1
T_A = 25 °C
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
100
T_A = 150 °C
10
T_A = 125 °C
1
0.1
0.01
T_A = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
10 000
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
10
Junction to Case
1
0.1
0.01
0.001
0.01
V(I)20100S
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
Document Number: 89190 For technical questions within your region, please contact one of the following:
Revision: 25-Mar-11
[e-mail], [e-mail], [e-mail]
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000